Dependence of device characteristics on the intrinsic material properties of high-performance AlGaN/GaN HEMTs

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 213-217

  Shelton, B S ^a   Wong, M M ^a   Zhu, T G ^a   Eiting, C J ^a   Lambert, D J H ^a   Lin, D E ^a   Kwon, H K ^b   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; HETEROJUNCTIONS; PIEZOELECTRICITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

EPITAXIAL LAYER;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033221983     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<213::AID-PSSA213>3.0.CO;2-9     Document Type: Article

References (6)

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