Bulk and surface properties of Cz-silicon after hydrogen plasma treatments

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4218, Issue , 2000, Pages 209-220

  Job, R ^a   Ulyashin, A G ^a   Fahrner, W R ^a   Markevich, V P ^a   Murin, L I ^a   Lindstrom J L ^a   Raiko, V ^a   Engemann, J ^a  

^a UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYDROGENATION; INFRARED SPECTROSCOPY; LUMINESCENCE; MOLECULES; NANOSTRUCTURED MATERIALS; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SURFACE PROPERTIES; THERMAL EFFECTS;

THERMAL DONOR (TD) FORMATION;

SEMICONDUCTING SILICON;

EID: 0034447097     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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