The formation of nanostructures on silicon surfaces in the presence of hydrogen

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2840-2842

  Teschke, O ^a   Soares, D M ^a   Nunes, L A O ^b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001575629     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119055     Document Type: Article

References (14)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. S. M. Prokes, W. E. Carlos, and V. M. Bermudez. Appl. Phys. Lett. 61, 1447 (1992).
3. L. R. Tessler, F. Alvarez. and O. Teschke. Appl. Phys. Lett. 62, 2381 (1993).
4. J. C. Tsang, M. A. Tischler, and R. T. Collins, Appl. Phys. Lett. 60, 2279 (1992).
5. V. Lehmann and H. Foll. J. Electrochem, Soc. 137, 653 (1990).
6. H. Koyama, T. Nakagawa, T. Ozaki, and N. Koshida, Appl. Phys. Lett. 65, 1656 (1994).
7. A. Bsievy, J. C. Vial, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, A. Wasiela, A. Halimaoui, and G. Bomchil, Surf. Sci. 254, 195 (1991).
8. M. I. J. Beale, J. D. Benjamin, M. J. Uren, N. G. Chew, and A. G. Cullis, J. Cryst. Growth 73, 622 (1985).
9. V. Lehmann and U. Gosele, Appl. Phys. Lett. 58, 856 (1991).
10. O. Teschke, M. C. Gonçalves, and F. Galembeck, Appl. Phys. Lett. 63, 1348 (1993).
11. D.M. Soares, M. C. Santos, and O. Teschke. Chem. Phys. Lett. 242, 202 (1995).
12. D. M. Soares. O. Teschke, and M. C. Santos, Langmuir 12, 2875 (1996).
13. O. Teschke, M. C. Santos, M. U. Kleinke, D. M. Soares, and D. S. Galvão, J. Appl. Phys. 78, 590 (1995).
14. S. J. Pearton, W. L. Hansen, E. E. Haller, and J. M. Kahn, J. Appl. Phys. 55, 1221 (1984).