Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO2 interfaces

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 485-491

  Niimi, Hiro ^a   Yang, Hanyang ^a   Lucovsky, Gerald ^a   Keister, Jeff W ^a   Rowe, Jack E ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENTS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; MONOLAYERS; NITRIDING; OSCILLATIONS; SEMICONDUCTING SILICON; SILICA; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

DIRECT TUNNELING; FOWLER-NORDHEIM TUNNELING;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0034300182     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00480-3     Document Type: Article

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