Postexposure delay effect on linewidth variation in base added chemically amplified resist

Journal of the Electrochemical Society

Volumn 147, Issue 10, 2000, Pages 3833-3839

  Ku, Chin Yu ^a   Shieh, Jia Min ^b   Chiou, Tsann Bim ^b   Lin, Hwang Kuen ^c   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICALLY AMPLIFIED POSITIVE DEEP ULTRAVIOLET RESIST; EXPOSURE ENERGY; LINEWIDTH VARIATION; PHOTOGENERATED ACID; POSTEXPOSURE DELAY EFFECT; RESIST FILMS; TERTBUTOXYCARBONYL;

ADDITIVES; COMPUTER SIMULATION; CONTAMINATION; EXCIMER LASERS; HEAT TREATMENT; ORGANIC ACIDS; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY;

PHOTORESISTS;

EID: 0034296193     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393981     Document Type: Article

References (27)

1. Y. Kawai, A. Otaka, A. Tanaka, and T. Matsuda, Jpn. J. Appl. Phys., 33, 7023 (1994).
2. S. A. MacDonald, N. J. Clecak, H. R. Wendt, C. G. Willson, C. D. Snyder, C. J. Knors, N. B. Deyoe, J. G. Maltabes, J. R. Morrow, A. E. McGuire, and S. J. Holmes, Proc. SPIE-Int. Soc. Opt. Eng., 1466, 2 (1991).
3. T. Kumada, Y. Tanaka, A. Ueyama, S. Kubota, and H. Koezuka, Proc. SPIE-Int. Soc. Opt. Eng., 1925, 31 (1993).
4. A. Oikawa, N. Santoh, and S. Miyata, Proc. SPIE-Int. Soc. Opt. Eng., 1925, 92 (1993).
5. T. Fischer, U. Boettiger, A. Grassmann, H. Moritz, H. Binder, D. Funhoff, and R. Schwalm, Microelectron. Eng., 23, 311 (1994).
6. V. Deshpande, N. Thane, J. Hargreaves, Y. Takamori, and E. Apelgren, Proc. SPIE-Int. Soc. Opt. Eng., 1926, 208 (1993).
7. K. J. Przybilla, Y. Kinoshita, T. Kudo, S. Masuda, H. Okazaki, M. Padmanaban, G. Pawlowski, J. Roeschert, W. Spiess, and N. Suehiro, Proc. SPIE-Int. Soc. Opt. Eng., 1925, 76 (1993).
8. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Microelectron. Eng., 35, 149 (1997).
9. T. Itani, H. Iwasaki, M. Fujimoto, and K. Kasama, Jpn. J. Appl. Phys., 33, 7005 (1994).
10. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Jpn. J. Appl. Phys., 35, 6501 (1996).
11. T. H. Fedynyshyn, J. W. Thackeray, J. H. Georger, and M. D. Denison, J. Vac. Sci Technol. B. 12, 3888 (1994).
12. T. Itani, H. Yoshino, M. Fujimoto, and K. Kasama, J. Vac. Sci. Technol. B, 13, 3026 (1995).
13. T. Yoshimura, H. Shiraishi, and S. Okazaki, Jpn. J. Appl. Phys., 34, 6786 (1995).
14. G. M. Wallraff, W. D. Hinsberg, F. A. Houle, M. Morrison, C. E. Larson, M. Sanchez, J. Hoffnagle, P. J. Brock, and G. Breyta, Proc. SPIE-Int. Soc. Opt. Eng., 3678, 138 (1999).
15. J. Kim, Y. Kwon, J. Choi, and M. Jung, Proc. SPIE-Int. Soc. Opt. Eng., 3678, 536 (1999).
16. J. L. P. Jessop, S. N. Goldie, A. B. Scranton, G. J. Blanchard, B. Rangarajan, L. Capodieci, R. Subramanian, and M. K. Templeton, Proc. SPIE-Int. Soc. Opt. Eng., 3678, 914 (1999).
17. X. Shi, Proc. SPIE-Int. Soc. Opt. Eng., 3678, 342 (1999).
18. J. Nakamura, H. Ban, K. Deguchi, and A. Tanaka, Jpn. J. Appl. Phys., 30, 2619 (1991).
19. J. S. Petersen, C. A. Mark, J. Sturtevant, J. D. Byers, and D. A. Miller, Proc. SPIE-Int. Soc. Opt. Eng., 2438, 167 (1995).
20. J. Nakamura, H. Ban, and A. Tanaka, Jpn. J. Appl. Phys., 33, 6368 (1994).
21. L. Ferreira, S. Malik, T. R. Sarubb, A. J. Blakeney, and B. Maxwell, Proc. SPIE-Int. Soc. Opt. Eng., 3333, 236 (1998).
22. T. H. Fedynyshyn, C. R. Szmanda, R. F. Blacksmith, W. E. Houck, and J. C. Root, J. Vac. Sci. Technol. B, 11, 2798 (1993).
23. G. Arthur, N. Eilbeck, and B. Martin, Microelectron. Eng., 35, 137 (1997).
24. D. J. H. Funhoff, H. Binder, and R. Schwalm, Proc. SPIE-Int. Soc. Opt. Eng., 1672, 46 (1992).
25. W. S. Huang, Proc. SPIE-Int. Soc. Opt. Eng., 3678, 1040 (1999).
26. J. Nakamura, H. Ban, and A. Tanaka, Jpn. J. Appl. Phys., 31, 4294 (1992).
27. T. Itani, H. Yoshino, S. Hashimoto, M. Yamana, N. Samoto, and K. Kasama, Photopolym. Sci. Technol., 10, 409 (1997).