Effect of temperature variations in the post-exposure processes of optical lithography

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 137-140

  Arthur, G ^a   Eilbeck, N ^b   Martin, B ^c  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b SANOFI   (France)

^c Plessey Semiconductors   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; PHOTORESISTS; TEMPERATURE;

OFF AXIS ILLUMINATION; PHASE SHIFTING MASK; POST EXPOSURE BAKE;

PHOTOLITHOGRAPHY;

EID: 0031073156     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00173-6     Document Type: Article

References (5)

1. Mack, C.A., "A Comprehensive Optical Lithography Model," Optical Microlithography IV, SPIE 538, 1985, pp207-220.
2. Thornton, S.H., Mack, C.A., "Lithography Model Tuning: Matching Simulation to Experiment," Optical Microlithography IX, SPIE 2726, 1996, pp223-235.
3. Martin, B., Arthur, G., "Investigation of Photoresist-Specific Linearity in Optical Lithography," these proceedings.
4. Yang, T.S., et al., "Enhanced I-line Lithography using AZ BARLi Coating," Advances in Resist Technology and Processing XIII, SPIE 2724, 1996, pp724-737.
5. Arthur, G., Martin, B., "Investigation of Resist-specific Optical Proximity Effect," Microelectronic Engineering, vol. 30, 1996, pp133-136.