3D Simulation of Deep-Submicron Devices: How Impurity Atoms Affect Conductance

IEEE Computational Science and Engineering

Volumn 2, Issue 2, 1995, Pages 30-37

  Zhou, Jing Rong ^a   Ferry, David K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MICROPROCESSOR CHIPS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; THREE DIMENSIONAL; VLSI CIRCUITS;

DEEP SUBMICRON DEVICES; DOPANTS; DRIFT DIFFUSION; HYDRODYNAMIC EQUATIONS; IMPURITY ATOMS; SEMICONDUCTOR INDUSTRY;

COMPUTER SIMULATION;

EID: 0029326694     PISSN: 10709924     EISSN: None     Source Type: Journal    
DOI: 10.1109/99.388952     Document Type: Article

References (5)

1. R. Keyes, “Physical Limits in Semiconductor Electronics,” Science, Vol. 195, 1972, p. 1,230.
2. D.K. Ferry, Y. Takagaki, and J-R. Zhou, “Future ULSI: Transport Physics in Semiconductor Nanostructures,” Japanese J. Applied Physics, Vol. 33, 1994, p. 873.
3. H-S. Wong and Y. Taur, “Three-Dimensional ‘Atomistic’ Simulation of Discrete Random Dopant Distribution Effect in Sub-0.lμm MOSFET’s,” Int’l Electron Device Meeting, IEEE Electron Devices Soc., New York, 1993, p. 705.
4. J-R. Zhou and D.K. Ferry, “Simulation of Ultra-Small GaAs MESFET Using Quantum Moment Equations,” IEEE Trans. Electron Devices, Vol. 39, No. 3, 1992, pp. 473–478.
5. D.K. Ferry, “Lateral Surface Superlattice and the Future of ULSI Microelectronics,” in Granular Nanoelectronics, D.K. Ferry, J.R. Barker, and C. Jacoboni, eds. Plenum, New York, 1991, p. 1.