Multi-valley effective-mass approximation of shallow donor levels in silicon

Solid State Communications

Volumn 8, Issue 22, 1970, Pages 1893-1897

  Ning, T H ^a   Sah, C T ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTORS; SILICON AND ALLOYS, PHYSICAL P; SSCOA; ST;

EID: 0014873269     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(70)90342-X     Document Type: Article

References (15)

1. Infrared Refractive Indexes of Silicon Germanium and Modified Selenium Glass
2. The model potential for positive ions
3. The screened model potential for 25 elements
4. Shallow States in Semiconductors by Impurity Model Potential Method
5. Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond