In-Plane Transport Properties of Si/Si1-xGexStructure and its FET Performance by Computer Simulation

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1513-1522

  Miyata, H ^b   Zhou, Jing Rong ^a   Ferry, David K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PERFORMANCE; QUANTUM THEORY; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE; TRANSPORT PROPERTIES;

IN PLANE TRANSPORT PROPERTIES; PHONON SCATTER LIMITED MOBILITY; QUANTUM CORRECTION; SATURATION VELOCITY; TWO-DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0028515347     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310101     Document Type: Article

References (24)

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