Use of the bending-beam-method for the study of the anodic oxidation of Si in dilute fluoride media

Electrochimica Acta

Volumn 45, Issue 28, 2000, Pages 4607-4613

  Decker, F ^a   Pantano, E ^a   Dini, D ^b   Cattarin, S ^c   Maffi, S ^d   Razzini, G ^d  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c CNR   (Italy)

^d POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; DISSOLUTION; ELECTRIC CURRENTS; ELECTROCHEMICAL ELECTRODES; ELECTROSTRICTION; ETCHING; FLUORINE COMPOUNDS; OSCILLATIONS; POLARIZATION; SILICA; SURFACE TENSION; THIN FILMS;

BENDING BEAM METHOD; FLUORIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034291857     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(00)00612-5     Document Type: Article

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