In situ characterization of the p-Si/NH4F interface during dissolution in the current oscillations regime

Journal of the Electrochemical Society

Volumn 145, Issue 2, 1998, Pages 498-502

  Cattarin, S ^a   Chazalviel, J N ^b,d   Da Fonseca, C ^b,d,e   Ozanam, F ^b   Peter, L M ^c,d   Schlichthorl G ^c,f   Stumper, J ^c,g  

^a CNR   (Italy)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^c UNIVERSITY OF BATH   (United Kingdom)

^d ELECTROCHEMICAL SOCIETY

^e INEB INSTITUTO DE ENGENHARIA BIOMÉDICA   (Portugal)

^f NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^g BALLARD POWER SYSTEMS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; DISSOLUTION; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; ELECTROCHEMICAL ELECTRODES; HYDROGEN; POROUS SILICON;

AMMONIUM FLUORIDE; ELECTRON INJECTION RATE; MICROWAVE REFLECTIVITY;

INTERFACES (MATERIALS);

EID: 0031996606     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838292     Document Type: Article

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