E-mode GaAs FET power amplifier MMIC for GSM phones

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1315-1318

  Abey, W ^a   Kawai, T ^a   Okamoto, I ^a   Suzuki, M ^a   Khandavalli, C ^a   Kennan, W ^a   Tateno, Y ^a   Nagahara, M ^a   Takikawa, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOBILE TELEPHONE EXCHANGES; POWER AMPLIFIERS; POWER CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

GLOBAL SYSTEMS FOR MOBILE COMMUNICATIONS (GSM); POWER ADDED EFFICIENCY (PAE);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0030676034     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)