0.2 cc HBT power amplifier module with 40% power-added efficiency for 1.95 GHz wide-band CDMA cellular phones

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 1099-1102

  Miyazawa, N ^a   Itoh, H ^a   Nakasha, Y ^a   Iwai, T ^a   Miyashita, T ^a   Ohara, S ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT CHANNEL LEAKAGE POWER; POWER ADDED EFFICIENCY; WIDEBAND CELLULAR PHONES;

CELLULAR TELEPHONE SYSTEMS; CODE DIVISION MULTIPLE ACCESS; COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC POWER SUPPLIES TO APPARATUS; HETEROJUNCTION BIPOLAR TRANSISTORS; QUADRATURE PHASE SHIFT KEYING;

POWER AMPLIFIERS;

EID: 0033360211     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. T. Iwai, S. Ohara, T. Miyashita and K. Joshin, "63.2% High Efficiency and High linearity Two-stage InGaP/GaAs HBT Power Amplifier for Personal Digital Cellular Phone System" IEEE MIT-S, pp.435-438, 1998.