3.2-V operation single-chip AlGaAs/GaAs HBT MMIC power amplifier for GSM900/1800 dual-band applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 4, Issue , 1999, Pages 1397-1400

  Yamamoto, K ^a   Shimura, T ^a   Asada, T ^a   Okuda, T ^a   Mori, K ^a   Choumei, K ^a   Suzuki, S ^a   Miura, T ^a   Fujimoto, S ^a   Hattori, R ^a   Nakano, H ^a   Hosogi, K ^a   Otsuji, J ^a   Inoue, A ^a   Yajima, K ^a   et al , ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC VARIABLES MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

DUAL BAND; GLOBAL SYSTEM MOBILE; ON CHIP BIAS CIRCUITS; POWER ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0033359892     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)