Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 9, 1998, Pages 1428-1432

  Jang, Jaejune ^a,b,e,f   Kan, Edwin C ^{a,b,c,g,h,i,j,k}   Arnborg, Torkel ^a,d,l,m,n   Johansson, Ted ^{a,d,o,p,q,r,s}   Dutton, Robert W ^a,b,f,t,u  

^a IEEE   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Department of Obstetrics Gynecology   (United States)

^d ERICSSON RADIO SYSTEMS AB   (Sweden)

^e MICHIGAN STATE UNIVERSITY   (United States)

^f Stanford University   (United States)

^g NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^h UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

ⁱ Air Force ^*  (Taiwan)

^j Dawn Technologies

^k School of Electrical Engineering

^l ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^m TEXAS INSTRUMENTS   (United States)

ⁿ Ericsson Microlectron Res Center

^o LINKÖPING INSTITUTE OF TECHNOLOGY   (Sweden)

^p Swed Inst Microwave Technol/M   (Sweden)

^q SWEDISH INSTITUTE OF COMPUTER SCIENCE   (Sweden)

^r ERICSSON RESEARCH   (Sweden)

^s Ericsson's Semiconductor Fab   (Sweden)

^t UNIVERSITY OF CALIFORNIA   (United States)

^u IBM RESEARCH   (United States)

more..

Author keywords

Ballasting; Parasitic characterization; Power BJT

Indexed keywords

EID: 0343970211     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.711343     Document Type: Article

References (9)

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3. G. Gao, M. S. Unlu, H. Morkoc, and D. L. Blackburn, "Emitter ballasting resistor design for, and current handling capability of AlGaAs/GaAs power heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 38, pp. 185-196, 1991.
4. W. Liu, "Thermal management to avoid the collapse of current gain in power heterojunction bipolar transistors," in GaAs IC Symp. Tech. Dig., 1995, pp. 147-150.
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6. J. Jang, E. C. Kan, L. So, R. W. Dutton, T. Johansson, and T. Arnborg, "Parasitic characterization of radio-frequency (RF) circuit using mixed-mode simulation," in Proc. CICC, 1996, pp. 445-448.
7. W. Liu, A. Khatibzadeh, J. Sweder, and H. Chau, "The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 43, pp. 245-251, 1996.
8. R. Ramachandran et al., "A high efficiency HBT MMIC power amplifier," in Proc. GaAs IC Symp., 1990, vol. 22, pp. 357-360.
9. U. Schaper and B. Holzapfl, "Analytical parameter extraction of the HBT equivalent circuit with T-like topology from measured S-parameters," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 493-498, 1995.