X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures

Journal of Crystal Growth

Volumn 217, Issue 1, 2000, Pages 26-32

  Pan, Z ^a   Wang, Y T ^a   Li, L H ^a   Zhang, W ^a   Lin, Y W ^a   Zhou, Z Q ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; THICKNESS MEASUREMENT; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS;

MATTHEWS AND BLAKESLEE MODEL; STRAIN RELAXATION; X RAY DOUBLE CRYSTAL CHARACTERIZATION;

X RAY CRYSTALLOGRAPHY;

EID: 0034230381     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00481-4     Document Type: Article

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