Heteroepitaxial growth of β-SiC thin films on Si(100) substrate using bis-trimethylsilylmethane

Applied Physics Letters

Volumn 69, Issue 26, 1996, Pages 4053-4055

  Bahng, Wook ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001598139     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117868     Document Type: Article

References (15)

1. H. Matsunami, S. Nishino, and H. Ono, IEEE Trans. Electron Devices ED-28, 1235 (1981).
2. S. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42, 460 (1983).
3. A. Suzuki, K. Furukawa, Y. Higashigaki, S. Harada, S. Nakajima, and T. Inoguchi, J. Cryst. Growth 70, 287 (1984).
4. P. Liaw and R. F. Davis, J. Electrochem. Soc. 132, 642 (1985).
5. P. Pirouz, C. M. Chorey, and J. A. Powell, Appl. Phys. Lett. 50, 221 (1987).
6. C. C. Chiu, S. B. Desu, and C. Y. Tsai, J. Mater. Res. 8, 2617 (1993).
7. A. L. Steckl, C. Yuan, J. P. Li, and M. L. Loboda, Appl. Phys. Lett. 63, 3347 (1993).
8. K. Takahashi, S. Nishino, and J. Saraie, J. Electrochem. Soc. 139, 3565 (1992).
9. N. Nordell, S. Nishino, J.-W. Yang, C. Jacob, and P. Pirouz, J. Electrochem. Soc. 142, 565 (1995).
10. I. Golecki, F. Reidinger, and J. Marti, Appl. Phys. Lett. 60, 1703 (1992).
11. JCPDS No. 29-1129.
12. A. Addamiano and J. A. Sprague, Appl. Phys. Lett. 44, 525 (1984).
13. H. J. Kim, R. F. Davis, X. B. Cox, and R. W. Linton, J. Electrochem. Soc. 134, 2269 (1987).
14. W. Bahng and H. J. Kim, in Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series, No. 142, edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (Institute of Physics, Bristol, 1996), pp. 225-228.
15. F. Ernst and P. Pirouz, J. Mater. Res. 4, 834 (1989).