Comparison of gettering in single- and multicrystalline silicon for solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 625-628

  Sopori, B L ^a   Jastrzebski, L ^a   Tan, T ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN INDUCED DEFECTS; LIGHT BEAM INDUCED CURRENT; LOW TEMPERATURE PROCESS; MULTICRYSTALLINE SILICON; PHOSPHORUS DIFFUSIONS; SINGLE CRYSTAL FLOAT ZONE WAFERS; SINGLE SILICON; SURFACE PHOTOVOLTAGE TECHNIQUE;

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; HYDROGEN; INDUCED CURRENTS; LIGHT; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SINGLE CRYSTALS; TRANSITION METALS;

SOLAR CELLS;

EID: 0030399005     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)