Selective wet etching of GaAs on AlxGa1-xAs for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor

Journal of Applied Physics

Volumn 84, Issue 7, 1998, Pages 3933-3938

  Moon, Eun A ^a   Lee, Jong Lam ^a   Yoo, Hyung Mo ^b,c  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Excelics Semiconductor Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001456107     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368571     Document Type: Article

References (13)

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