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Journal of Electronic Materials

Volumn 27, Issue 7, 1998, Pages 915-917

High selectivity plasma etching of InN over GaN

(8) Cho, Hyun a Hong, J a Maeda, T a,b Donovan, S M a Abernathy, C R a Pearton, S J a Shul, R J c Han, J c

a University of Florida (United States)

b FUJITSU LABORATORIES LTD (Japan)

c SANDIA NATIONAL LABORATORIES (United States)

Author keywords

GaN; InN; Selectivity plasma etching

Indexed keywords

EID: 0342396591 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-998-0118-z Document Type: Article

Times cited : (8)

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