Electron cyclotron resonance plasma etching of AlGaN in Cl2/Ar and BCl3/Ar plasmas

Journal of the Electrochemical Society

Volumn 144, Issue 6, 1997, Pages 2146-2149

  Vartuli, C B ^a   Pearton, S J ^a   Lee, J W ^a   Polyakov, A Y ^b   Shin, M ^b   Greve, D W ^b   Skronowski, M ^b   Shul, R J ^c  

^a University of Florida   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BOND STRENGTH (CHEMICAL); BORON COMPOUNDS; CHLORINE; COMPOSITION EFFECTS; ELECTRON CYCLOTRON RESONANCE; PLASMA ETCHING; REACTION KINETICS;

ALUMINUM NITRIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031162813     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837754     Document Type: Article

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