Distinct orientation of AlN thin films deposited on sapphire substrates by laser ablation

Applied Physics A: Materials Science and Processing

Volumn 70, Issue 2, 2000, Pages 215-218

  Meinschien, J ^a   Falk, F ^a   Hergt, R ^a   Stafast, H ^a  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; LASER ABLATION; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SINTERING; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ALUMINUM NITRIDE; FILM THICKNESS;

THIN FILMS;

EID: 0034138931     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050035     Document Type: Article

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