Pulsed laser deposition of highly crystalline GaN films on sapphire

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 343-348

  Vispute, R D ^a   Talyansky, V ^a   Chupoon, S ^a   Enck, R ^a   Dahmas, T ^a   Ogale, S B ^a   Sharma, R P ^a   Venkatesan, T ^a   Li, Y X ^a   Salamanca Riba, L G ^a   Iliadis, A A ^a   He, M ^a   Tang, X ^a   Halpern, J B ^a   Spencer, M G ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EPITAXIAL GROWTH; EXCIMER LASERS; FILM GROWTH; LASER ABLATION; POLYCRYSTALLINE MATERIALS; PULSED LASER APPLICATIONS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STOICHIOMETRY; X RAY CRYSTALLOGRAPHY;

GALLIUM NITRIDE FILMS; PULSED LASER DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0031348852     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-343     Document Type: Conference Paper

References (15)