메뉴 건너뛰기




Volumn 35, Issue 2, 2000, Pages 142-148

Optimized test circuits for SER characterization of a manufacturing process

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; SENSORS;

EID: 0033900509     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.823440     Document Type: Article
Times cited : (13)

References (24)
  • 1
    • 0018331014 scopus 로고
    • Alpha-particle-induced soft errors in dynamic memories
    • Jan.
    • T. C. May and M. H. Woods, "Alpha-particle-induced soft errors in dynamic memories," IEEE Trans. Electron Devices, vol. ED-26, pp. 2-9, Jan. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 2-9
    • May, T.C.1    Woods, M.H.2
  • 2
    • 0029732375 scopus 로고    scopus 로고
    • IBM experiments in soft fails in computer electronics (1978-1994)
    • Jan.
    • J. F. Ziegler et al., "IBM experiments in soft fails in computer electronics (1978-1994)," IBM J. Res. Develop., vol. 40, pp. 3-16, Jan. 1996.
    • (1996) IBM J. Res. Develop. , vol.40 , pp. 3-16
    • Ziegler, J.F.1
  • 3
    • 0028419307 scopus 로고
    • The effect of cosmic rays on the soft error rate of a DRAM at ground level
    • Apr.
    • T. J. O'Gorman, "The effect of cosmic rays on the soft error rate of a DRAM at ground level," IEEE Trans. Electron Devices, vol. 41, pp. 553-557, Apr. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 553-557
    • O'Gorman, T.J.1
  • 4
    • 0029718244 scopus 로고    scopus 로고
    • Cosmic ray neutron induced upsets as a major contributor to the soft error rate of current and future generation DRAM's
    • W. R. McKee et al., "Cosmic ray neutron induced upsets as a major contributor to the soft error rate of current and future generation DRAM's," in IEEE IRPS, 1996, pp. 1-6.
    • (1996) IEEE IRPS , pp. 1-6
    • McKee, W.R.1
  • 5
    • 0029732376 scopus 로고    scopus 로고
    • Field testing for cosmic ray soft errors in semiconductor memories
    • Jan.
    • T. J. O'Gorman et al., "Field testing for cosmic ray soft errors in semiconductor memories," IBM J. Res. Develop., vol. 40, pp. 41-49, Jan. 1996.
    • (1996) IBM J. Res. Develop. , vol.40 , pp. 41-49
    • O'Gorman, T.J.1
  • 6
    • 0027850966 scopus 로고
    • Soft error rate and stored charge requirements in advanced high-density SRAMs
    • C. Lage et al., "Soft error rate and stored charge requirements in advanced high-density SRAMs," in IEDM Tech. Dig., 1993, pp. 821-824.
    • (1993) IEDM Tech. Dig. , pp. 821-824
    • Lage, C.1
  • 7
    • 0032319596 scopus 로고    scopus 로고
    • Single event upsets in implantable cardioverter defibrillators
    • Dec.
    • P. D. Bradley and E. Normand, "Single event upsets in implantable cardioverter defibrillators," IEEE Trans. Nucl. Sci., vol. 45, pp. 2929-2940, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci. , vol.45 , pp. 2929-2940
    • Bradley, P.D.1    Normand, E.2
  • 8
    • 0030349739 scopus 로고    scopus 로고
    • Single event upset at ground level
    • Dec.
    • E. Normand, "Single event upset at ground level," IEEE Trans. Nucl. Sci., vol. 43, pp. 2742-2750, Dec. 1996.
    • (1996) IEEE Trans. Nucl. Sci. , vol.43 , pp. 2742-2750
    • Normand, E.1
  • 9
    • 0028699690 scopus 로고
    • Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays
    • Dec.
    • G. R. Srinivasan, H. K. Tang, and P. C. Murley, "Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays," IEEE Trans. Nucl. Sci., vol. 41, pp. 2063-2070, Dec. 1994.
    • (1994) IEEE Trans. Nucl. Sci. , vol.41 , pp. 2063-2070
    • Srinivasan, G.R.1    Tang, H.K.2    Murley, P.C.3
  • 11
    • 0033080235 scopus 로고    scopus 로고
    • Simple method for estimating neutron-induced soft error rates based on modified BGR model
    • Feb.
    • Y. Tosaka et al., "Simple method for estimating neutron-induced soft error rates based on modified BGR model," IEEE Electron Device Lett., vol. 20, pp. 89-91, Feb. 1999.
    • (1999) IEEE Electron Device Lett. , vol.20 , pp. 89-91
    • Tosaka, Y.1
  • 12
    • 0029752087 scopus 로고    scopus 로고
    • Critical charge calculations for a bipolar SRAM array
    • Jan.
    • L. B. Freeman, "Critical charge calculations for a bipolar SRAM array," IBM J. Res. Develop., vol. 40, pp. 119-129, Jan. 1996.
    • (1996) IBM J. Res. Develop. , vol.40 , pp. 119-129
    • Freeman, L.B.1
  • 13
    • 0033079546 scopus 로고    scopus 로고
    • Alpha-particle-induced collected charge model in SOI DRAM's
    • Feb.
    • S. Satoh et al., "Alpha-particle-induced collected charge model in SOI DRAM's," IEEE Trans. Electron Devices, vol. 46, pp. 388-395, Feb. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 388-395
    • Satoh, S.1
  • 14
    • 0029342231 scopus 로고
    • Calculation of the soft error rate of submicron CMOS logic circuits
    • July
    • T. Juhnke and H. Klar, "Calculation of the soft error rate of submicron CMOS logic circuits," IEEE J. Solid-State Circuits, vol. 30, pp. 830-834, July 1995.
    • (1995) IEEE J. Solid-state Circuits , vol.30 , pp. 830-834
    • Juhnke, T.1    Klar, H.2
  • 15
    • 0029535998 scopus 로고
    • Application of a diffusion model to SEE cross sections of modern devices
    • Dec.
    • E. C. Smith et al., "Application of a diffusion model to SEE cross sections of modern devices," IEEE Trans. Nucl. Sci., vol. 42, pp. 1772-1779, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci. , vol.42 , pp. 1772-1779
    • Smith, E.C.1
  • 16
    • 0020298427 scopus 로고
    • Collection of charge on junction nodes from ion tracks
    • Dec.
    • G. C. Messenger, "Collection of charge on junction nodes from ion tracks," IEEE Trans. Nucl. Sci., vol. 29, pp. 2024-2031, Dec. 1982.
    • (1982) IEEE Trans. Nucl. Sci. , vol.29 , pp. 2024-2031
    • Messenger, G.C.1
  • 17
    • 0029770964 scopus 로고    scopus 로고
    • Soft-error Monte Carlo modeling program, SEMM
    • Jan.
    • P. C. Murley and G. R. Srinivasan, "Soft-error Monte Carlo modeling program, SEMM," IBM J. Res. Develop., vol. 40, pp. 109-118, Jan. 1996.
    • (1996) IBM J. Res. Develop. , vol.40 , pp. 109-118
    • Murley, P.C.1    Srinivasan, G.R.2
  • 18
    • 0032122796 scopus 로고    scopus 로고
    • Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits
    • July
    • Y. Tosaka et al., "Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits," IEEE Trans. Electron Devices, vol. 45, pp. 1453-1458, July 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1453-1458
    • Tosaka, Y.1
  • 19
    • 0032319595 scopus 로고    scopus 로고
    • Neutron induced soft errors in CMOS memories under reduced bias
    • Dec.
    • P. Hazucha, K. Johansson, and C. Svensson, "Neutron induced soft errors in CMOS memories under reduced bias," IEEE Trans. Nucl. Sci., vol. 45, pp. 2921-2928, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci. , vol.45 , pp. 2921-2928
    • Hazucha, P.1    Johansson, K.2    Svensson, C.3
  • 20
    • 0025639384 scopus 로고
    • Alpha-particle sensitive test SRAM
    • Dec.
    • M. G. Buehler and B. R. Blaes, "Alpha-particle sensitive test SRAM," IEEE Trans. Nucl. Sci., vol. 37, pp. 1849-1854, Dec. 1990.
    • (1990) IEEE Trans. Nucl. Sci. , vol.37 , pp. 1849-1854
    • Buehler, M.G.1    Blaes, B.R.2
  • 21
    • 0027884957 scopus 로고
    • Charge collection spectroscopy
    • Dec.
    • R. A. Reed et al., "Charge collection spectroscopy," IEEE Trans. Nucl. Sci., vol. 40, pp. 1880-1887, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1880-1887
    • Reed, R.A.1
  • 22
    • 0027812596 scopus 로고
    • Single event phenomena in atmospheric neutron environments
    • Dec.
    • C. A. Gossett et al., "Single event phenomena in atmospheric neutron environments," IEEE Trans. Nucl. Sci., vol. 40, pp. 1845-1852, Dec. 1993.
    • (1993) IEEE Trans. Nucl. Sci. , vol.40 , pp. 1845-1852
    • Gossett, C.A.1
  • 23
    • 0029516455 scopus 로고
    • Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons
    • Dec.
    • E. Normand et al., "Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons," IEEE Trans. Nucl. Sci., vol. 42, pp. 1815-1822, Dec. 1995.
    • (1995) IEEE Trans. Nucl. Sci. , vol.42 , pp. 1815-1822
    • Normand, E.1
  • 24
    • 0031125059 scopus 로고    scopus 로고
    • Measurements and analysis of neutron-reaction-induced charges in a silicon surface region
    • Apr.
    • Y. Tosaka et al., "Measurements and analysis of neutron-reaction-induced charges in a silicon surface region," IEEE Trans. Nucl. Sci., vol. 44, pp. 173-178, Apr. 1997.
    • (1997) IEEE Trans. Nucl. Sci. , vol.44 , pp. 173-178
    • Tosaka, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.