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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 182-187

Ellipsometric characterization of oxidized porous silicon layer structures

(6) Lohner, T a,b Fried, M a Petrik, P a Polgar O a Gyulai, J a Lehnert, W a

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELLIPSOMETRY; GRAIN BOUNDARIES; HEAT TREATMENT; OXIDATION; POLYCRYSTALLINE MATERIALS; POROUS SILICON; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE MODELS; SINGLE CRYSTALS;

FINE-GRAINED POLYCRYSTALLINE SILICON; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0033891968 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00257-3 Document Type: Article

Times cited : (24)

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