Depth inhomogeneity of porous silicon layers

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 2990-2993

  Thonissen M ^a   Billat, S ^a   Kruger M ^a   Luth H ^a   Berger, M G ^a   Frotscher, U ^b   Rossow, U ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037980957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363156     Document Type: Article

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