Investigation of different oxidation processes for porous silicon studied by spectroscopic ellipsometry

Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 36-39

  Frotscher, U ^a   Rossow, U ^a,b   Ebert, M ^a   Pietryga, C ^a   Richter, W ^a   Berger, M G ^c   Arens Fischer, R ^c   Munder H ^c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Ellipsometry; Multilayers; Oxidation; Silicon

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELLIPSOMETRY; MULTILAYERS; OXIDATION; PASSIVATION; SPECTROSCOPIC ANALYSIS;

DIELECTRIC FUNCTIONS;

POROUS SILICON;

EID: 0030120564     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08044-9     Document Type: Article

References (11)

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