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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 108, Issue 4, 1996, Pages 399-402

Channeling studies of relaxed, epitaxial Si1 - XGex films

(2) Monakhov, Edouard V a Larsen, Arne Nylandsted a

a AARHUS UNIVERSITY (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL ATOMIC STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILMS; GERMANIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

COMPOSITIONAL GRADING TECHNIQUE; GRADED BUFFER LAYER; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030106553 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/0168-583X(95)01262-1 Document Type: Article

Times cited : (7)

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