InGaN/GaN quantum well structures grown on bulk GaN and sapphire substrates

Journal of the Korean Physical Society

Volumn 34, Issue SUPPL. 3, 1999, Pages

  Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033450443     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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2. H. Sato, T. Sugahara, Y. Naoi and S. Sakai, Jpn. J. Appl. Phys. 37, 2013 (1998).
3. S. Keller, U. K. Mishra, S. P. Denbaars and W. Seifert, Jpn. J. Appl. Phys. 37, L431 (1998).
4. T. Sugahara, M. Hao, T. Wang, D. Nakagawa, Y. Naoi, K. Nishino and S. Sakai, Jpn. J. Appl. Phys. Part 237, L1195 (1998).
5. H. Sato, T. Sugahara, M. Hao, Y. Naoi, S. Kurai, K. Yamashita, K. Nishino and S. Sakai, Jpn. J. Appl. Phys. 37, 626 (1998).