Growth of bulk GaN by sublimation method

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1107-1110

  Sakai, S ^a   Sato, H ^a   Sugahara, T ^a   Naoi, Y ^a   Kurai, S ^a   Yamashita, K ^a   Tottori, S ^a   Hao, M ^a   Wada, K ^a   Nishino, K ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Bulk GaN; Dislocation; Homoepitaxy; Substrate

Indexed keywords

CATHODOLUMINESCENCE; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; PHOTOEMISSION; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBLIMATION; SUBSTRATES; SURFACE TREATMENT;

HOMOEPITAXY; SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0342457407     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1107     Document Type: Article

References (3)

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