High-temperature properties of InGaN light-emitting diodes

Quantum Electronics

Volumn 28, Issue 11, 1998, Pages 987-990

  Akimova, I V ^b   Eliseev, P G ^a,b   Osinski, M ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013104803     PISSN: 10637818     EISSN: None     Source Type: Journal    
DOI: 10.1070/QE1998v028n11ABEH001370     Document Type: Article

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