Current transport and emission mechanisms in high-brightness green InGaN/AlGaN/GaN single-quantum-well light-emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3002, Issue , 1997, Pages 15-25

  Osinski, Marek ^a   Perlin, Piotr ^a,b   Eliseev, Petr G ^a,c   Furioli, Julien ^a,d  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^d TELECOM PARISTECH   (France)

Author keywords

Band tails; Electroluminescence; GaN; InGaN; Light emitting diodes; Photoluminescence; Tunneling

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUSTRIAL RESEARCH; LIGHT; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; OPTOELECTRONIC DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLUMINESCENCE; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; TUNNELING (EXCAVATION);

ACTIVE LAYERS; BAND FILLINGS; BAND TAILS; CARRIER TUNNELLING; CURRENT CHARACTERISTICS; CURRENT TRANSPORT; EMISSION MECHANISMS; EMISSION PEAKING; GAN; INGAN; INTER-BAND TRANSITIONS; P N JUNCTIONS; TEMPERATURE SHIFTS; TUNNELING;

LIGHT EMISSION;

EID: 11744249553     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.271044     Document Type: Conference Paper

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