Auger recombination in direct-gap semiconductors: Band-structure effects

Journal of Physics C: Solid State Physics

Volumn 16, Issue 21, 1983, Pages 4159-4172

  Haug, A ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36149046194     PISSN: 00223719     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3719/16/21/017     Document Type: Article

References (21)

1. Recombination in Semiconductors by a Light Hole Auger Transition
2. Band-to-band Auger recombination effect on InGaAsP laser threshold