Gallium antimonide device related properties

Solid State Electronics

Volumn 36, Issue 6, 1993, Pages 803-818

  Milnes, A G ^a   Polyakov, A Y ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROOPTICAL EFFECTS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

DIRECT GAP SEMICONDUCTORS; GALLIUM ANTIMONIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0027608745     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(93)90002-8     Document Type: Review

References (142)

1. Thermodynamic analysis and phase equilibria calculations for the InSb and GaSb systems
2. Heats of formation and temperatures and heats of fusion of compounds A(III) B(V)
3. Electrical and optical studies in gallium antimonide
4. Reverse characteristics of GaSb tunnel diodes
5. Band structure of GaAs, GaP, InP, and AlSb: the k.p method
6. xSb band structure
7. A detailed Hall-effect analysis of sulfur-doped gallium antimonide grown by molecular-beam epitaxy
8. N-type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source
9. 1-x
10. 1-xSb on GaSb
11. Deep donors in GaSb grown by molecular beam epitaxy
12. 1-xSb grown by molecular beam epitaxy
13. MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared lasers
14. 3
15. Tellurium doping of GaSb grown by molecular beam epitaxy using SnTe
16. Summary abstract controlled n-type doping of GaSb
17. Sulphur doping behavior of gallium antimonide grown by molecular beam epitaxy
18. Resonant tunneling in polytype InAs/AlSb/GaSb heterostructures
19. Spectroscopic studies of shallow defects in MBE GaSb
20. Electrical characterization of thermally grown native oxide on gallium antimonide
21. Long-time air oxidation and oxide-substrate reactions on GaSb, GaAs and GaP at room temperature studied by X-ray photoelectron spectroscopy
22. Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces
23. Growth temperature dependence of intrinsic and extrinsic acceptor concentration in (Ga,Al)Sb evaluated by C-V characteristics of metal-insulator-semiconductor structures
24. Electromigration of Ga and Sb during anodization of Al/GaSb structures
25. Properties of AuZn ohmic contacts to p-GaSb
26. Ohmic contacts to p- and n-type GaSb
27. Metals on cleaved gallium antimonide Schottky barriers and interface reactions
28. Electrical properties of GaSb Schottky diodes and p-n junctions
29. Empirical fit to band discontinuities and barrier heights in III–V alloy systems
30. The effect of annealing temperature on electrical properties of Pd/n-GaSb Schottky contacts
31. In situ Schottky contacts to molecular-beam epitaxially grown gallium antimonide
32. 0.95 and the influence of hydrogen and sulfur treatments on the properties
33. A controllable etchant for fabrication of GaSb devices
34. 4
35. Hydrogen treatment effect on shallow and deep centers in GaSb
36. Interband Auger recombination involving a spin-orbit split-off valence band in p-type GaSb crystals
37. xSb
38. Analysis of screening effects on interband Auger processes in GaSb
39. Diffusion
40. Spin-on diffused GaSb mesa photodiode with high breakdown voltages
41. High resistivity GaSb grown by MBE
42. Photoluminescence of epitaxial gallium antimonide films grown from antimony-rich melts
43. Ion implantation damage and annealing in InAs, GaSb, and GaP
44. Amorphization of elemental and compound semiconductors upon ion implantation
45. 0.04Sb epitaxial layers
46. Anomalous behavior of ion-implanted GaSb
47. High-purity GaSb epitaxial layers grown from Sb-rich solutions
48. Influence of isovalent doping with indium on “natural” acceptors in gallium antimonide
49. 0.935Sb by liquid phase epitaxy
50. 1-xSb alloy semiconductor
51. 1-y on GaSb
52. Experiments and calculation of the Al-Ga-Sb ternary phase diagram
53. LPE growth of GaInAsSb/GaSb system the importance of the sign of the lattice mismatch
54. 0.04Sb: electrical and photoelectrical characterizations
55. Chemical cleaning of GaSb (1 0 0) surfaces
56. Influence of surface preparation on the morphology of GaSb films grown by molecular beam epitaxy
57. Study of GaSb(001) substrate chemical etching for molecular-beam epitaxy
58. p-type doping of GaSb by Ge and Sn grown by molecular beam epitaxy
59. Characterization of n-doped GaSb and of a GaSb/InAs heterojunction grown by MOVPE
60. GaSb/InAs heterojunctions grown by MOVPE
61. GaSb/InAs heterojunctions grown by MOVPE: effect of gas switching sequences on interface quality
62. 1-y quaternary layers
63. Lateral growth on GaSb(111)B and GaSb(001) by metal-organic chemical vapour deposition
64. Heteroepitaxial growth of gallium antimonide on GaAs by low pressure MOVPE
65. Summary abstract a nondestructive synchrotron radiation photoemission study of the band lineup for buried GaSbAlSb interfaces
66. Summary abstract valence-band discontinuities in (100) GaSb/AlSb and GaSb/InAs heterojunctions
67. X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity
68. Band-edge alignment in heterostructures
69. Summary abstract band discontinuities at InAsSb/GaSb heterojunctions
70. Light scattering determinatins of band offsets in semiconductor heterostructures
71. Electronic properties of InAs-GaSb superlattices
72. Energy bandgap and Lattice constant contours of III–V quaternary alloys
73. Bandgaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: key properties for a variety of the 2–4 μm optoelectronic device applications
74. Heterostructure devices: a device physicist looks at interfaces
75. Thermal resistivity of quaternary solid solutions InGaSbAs and GaAlSbAs lattice-matched to GaSb
76. Strain and critical thickness in GaSb(001)/AlSb
77. Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures
78. Ternary semiconductor heterostructures: the choice of an appropriate compositional analysis technique
79. Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
80. 1-ySb heterostructures
81. 25 μm GaInAsSb lattice-matched to GaSb by liquid phase epitaxy
82. 0.04Sb
83. Room temperature injection lasers (λ ∼ 12–24 μm)
84. AlGaSb avalanche photodiode exhibiting a very low excess noise factor
85. 1-xSb
86. 1-xSb
87. Dark currents in GaAlAsSb diode structures of “Resonance” composition
88. Impact ionization in Ga1−xAlxSb
89. Reverse current and external quantum efficiency of zinc diffused 1.3 μm GaAlAsSb photodiodes
90. High-speed GaInAsSb/GaSb pin photodetectors for wavelengths to 2–3 μm
91. 0.15/InAs infra-red (1.8–4.8 μm) detectors
92. Nonlinear exitonic optical absorption in GaSb
93. xSb/AlSb superlattices for infrared detection
94. GaSb booster cells for over 30% efficient solar-cell stacks
95. Semiconductor lasers with wavelengths exceeding 2 μm
96. High-speed wave-guide optical modulator made from GaSb/AsGaSb multiple quantum wells (MQWs)
97. 1-y in the transparent wavelength region
98. 0.965 double heterostructures grown by molecular beam epitaxy on GaSb substrates
99. Room-temperature GaInAsSb DH injection lasers at 2.2 μm
100. Reduction of threshold current density of 2.2 μm GaInAsSb/AlGaAsSb injection lasers
101. 22 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density
102. Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range
103. MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers
104. Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
105. High-speed modulation characteristics of a GaSb/AlGaSb multiquantum-well laser diode
106. Linewidth enhancement factor for GaInSbAs/GaSb lasers
107. Electron transport in an AlSb/InAs/GaSb tunnel emitter hot-electron transistor
108. InAs quantum-well-base InAs/GaSb hot-electron transistors
109. Room-temperature operation of GaSb/InAs hot electron transistors grown by MOCVD
110. InAs-GaSb hot electron transistor grown by metalorganic chemical vapor deposition
111. Heterojunction bipolar transistor utilizing AlGaSb/GaSb alloy system
112. High performance GaSb P-channel MODFET's
113. A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb
114. A p-channel GaSb heterojunction field effect transistor based on a vertically integrated complementary circuit structure
115. Molecular beam epitaxy of GaSb/InAs/GaSb heterostructures with a high mobility of two-dimensional electrons
116. InAs-AlSb heterostructure field-effect transistors fabricated using argon implantation for device isolation
117. Modeling of novel heterojunction tunnel structures
118. Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices
119. InAs/GaSb/AlSb: the material system of choice for novel tunneling devices
120. InAs/AlSb double-barrier structure with large peak-to-valley current ratio a candidate for high-frequency microwave devices
121. InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature
122. Investigation of the influence of the well and the barrier thickness in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures
123. On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures
124. Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode
125. InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature
126. A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanism
127. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
128. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
129. Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
130. Resonant interband tunneling in InAs/GaSb/AlSb/InAs and GaSb/InAs/AlSb/GaSb heterostructures
131. Thermal stability of an AlSb/GaSb superlattice
132. Molecular beam epitaxy growth and characterization of GaSb/AlSb strained-layer superlattices on nonvincinal (001) and 111(B) GaSb substrates
133. Forbidden Auger process in strained InGaSb/AlGaSb quantum wells
134. Analysis of the quantum-confined stark effect in GaSb/AlGaSb multiple quantum wells
135. Optically induced femtosecond electromagnetic pulses from GaSb/AlSb strained-layer superlattices
136. Quasi-direct narrow GaSb-AlSb (100) quantum wells
137. Molecular beam epitaxy growth of Sb/GaSb multilayer structures: potential application as a narrow bandgap system