Tellurium doping study of GaSb grown by molecular beam epitaxy using SnTe

Journal of Crystal Growth

Volumn 111, Issue 1-4, 1991, Pages 619-622

  Chen, J F ^a   Cho, A Y ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; MOLECULAR BEAM EPITAXY; TELLURIUM;

GALLIUM ANTIMONIDE; TIN TELLURIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0026413134     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(91)91051-B     Document Type: Article

References (15)

1. Summary Abstract: Controlled n-type doping of GaSb
2. S-Doping of MBE-GaSb with H2S Gas