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Journal of Applied Physics

Volumn 69, Issue 10, 1991, Pages 7102-7110

Majority and minority electron and hole mobilities in heavily doped GaAs

(2) Lowney, Jeremiah R a Bennett, Herbert S a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449009427 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.347650 Document Type: Article

Times cited : (94)

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