INTERBAND AUGER RECOMBINATION IN LASER STRUCTURES BASED ON GaSb.

Soviet physics. Semiconductors

Volumn 18, Issue 10, 1984, Pages 1128-1130

  Gel'mont, B L ^a   Sokolova, Z N ^a   Khalfin, V B ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; SEMICONDUCTOR MATERIALS - ENERGY GAP; SPECTROSCOPY, AUGER ELECTRON - APPLICATIONS;

KANE MODEL; MODEL OF PARABOLIC BANDS; QUANTUM EFFICIENCY; RADIATIVE RECOMBINATION; THRESHOLD DENSITY;

LASERS, SEMICONDUCTOR;

EID: 0002267632     PISSN: 00385700     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)