Photoluminescence and electrical properties of MOVPE-grown zinc-doped gallium antimonide on gallium arsenide

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 794-798

  Hjelt, Kari ^a   Tuomi, Turkka ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM ANTIMONIDE; PAUW-HALL TECHNIQUE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030686758     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00543-X     Document Type: Article

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