Electron mobility in GaSb

Solid State Electronics

Volumn 38, Issue 1, 1995, Pages 59-67

  Chin, V W L ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; CURVE FITTING; ELECTRON TRANSPORT PROPERTIES; PHONONS; POLYNOMIALS; SCATTERING; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

BAND MINIMA; CARRIER COMPENSATION; CONDUCTION BANDS; ELECTRON CONCENTRATION; ELECTRON HALL MOBILITY; ELECTRON MOBILITY; INTERVALLEY SCATTERING; PHONON SCATTERING; THIN EPILAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029209649     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)E0063-K     Document Type: Article

References (48)

1. Molecular-beam epitaxial growth of high-mobility n-GaSb
2. Undopedn-Type GaSb Grown by Liquid Phase Epitaxy
3. Vapor-Phase Growth of Te-Doped GaSb
4. Calculations of the electron mobility of InAsxP1−x
5. Optical Determination of Carrier Concentration and Mobility in p and n Bulk GaSb by Infrared Reflectivity Spectral Analysis
6. Conduction bands of GaxIn1–xSb alloys
7. Stress-Modulated Magnetoreflectivity of Gallium Antimonide and Gallium Arsenide
8. Oscillatory magneto-absorption in gallium antimonide JA-1149∗
9. Electron effective-mass values in GaxIn1−xSb alloys
10. Study of the (111) Conduction Band of GaSb
11. Experimental Study of the Conduction Band of GaSb
12. Landolt-Bernstein Series
13. Galvanomagnetic effects in n-type gallium antimonide
14. Characterization of GaxIn1−xAs grown with TMIn
15. A novel technique for Czochralski growth of GaSb single crystals