Cubic aluminum nitride and gallium nitride thin films prepared by pulsed laser deposition

Applied Surface Science

Volumn 154, Issue , 2000, Pages 439-443

  Wang, L D ^a   Kwok, H S ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; DEPOSITION; HIGH TEMPERATURE EFFECTS; NITRIDES; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILMS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; PULSED LASER DEPOSITION (PLD);

SEMICONDUCTING FILMS;

EID: 0033877880     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00372-4     Document Type: Article

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