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Thin Solid Films

Volumn 306, Issue 2, 1997, Pages 231-236

MBE growth and characteristics of cubic GaN

(4) Ploog, K H a Brandt, O a Yang, H a Trampert, A a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

Cubic GaN heteroepitaxy; Impurity profile; MBE of p type GaN; Photoluminescence; Plasma assisted MBE

Indexed keywords

CRYSTAL IMPURITIES; ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; NUCLEATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

CUBIC GALLIUM NITRIDE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0031224704 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00180-6 Document Type: Article

Times cited : (12)

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