Comparative study of hexagonal and cubic GaN growth by RF-MBE

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 233-237

  Feuillet, G ^a   Widmann, F ^a   Daudin, B ^a   Schuler, J ^a   Arlery, M ^a   Rouviere J L ^a   Pelekanos, N ^a   Briot, O ^b  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Cubic GaN growth; Hexagonal GaN growth; RF MBE

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0343410292     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00179-7     Document Type: Article

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