Growth of gallium nitride thin films by liquid-target pulsed laser deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 2207-2213

  Xiao, R F ^a   Sun, X W ^a   Li, Z F ^a   Cue, N ^a   Kwok, H S ^a   Liu, Q Z ^b   Lau, S S ^b  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; DEPOSITION; ELECTROOPTICAL EFFECTS; FILM GROWTH; PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY POWDER DIFFRACTION;

AMMONIA GAS; BAND GAP MEASUREMENT; GALLIUM NITRIDE; LIQUID TARGET PULSED LASER DEPOSITION; OPTICAL TRANSPARENCY; OPTOELECTRONIC PROPERTIES; ULTRAVIOLET VISIBLE SPECTROMETRY;

SEMICONDUCTING FILMS;

EID: 0031192940     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580535     Document Type: Article

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