60 nm channel length silicon stacked tunnel transistor

Annual Device Research Conference Digest

Volumn , Issue , 1999, Pages 132-133

  Nakazato, K ^a   Itoh, K ^a   Mizuta, H ^a   Ahmed, H ^a  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TUNNEL JUNCTIONS;

SILICON STACKED TUNNEL TRANSISTORS;

MOSFET DEVICES;

EID: 0033365578     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (2)