Ion beam induced amorphous-crystalline phase transition in Si: quantitative approach

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 168, Issue 3, 2000, Pages 375-388

  Titov, Andrei I ^a   Kucheyev, Sergei O ^a  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTALLIZATION; INTERFACES (MATERIALS); ION BOMBARDMENT; MATHEMATICAL MODELS; PHASE TRANSITIONS; POINT DEFECTS; REACTION KINETICS; SILICON;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION; ION BEAM INDUCED INTERFACE AMORPHIZATION; PHASE BOUNDARY; PHASE TRANSITION KINETICS;

ION BEAMS;

EID: 0033726991     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)01095-2     Document Type: Article

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