Amorphization of Si(0 0 1) by ultra low energy (0.5-5 keV) ion implantation observed with high-resolution RBS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 284-288

  Kimura, K ^a   Agarwal, A ^b   Toyofuku, H ^a   Nakajima, K ^a   Gossmann, H J ^c  

^a KYOTO UNIVERSITY   (Japan)

^b EATON CORPORATION   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

Amorphization; High resolution; Ion implantation; RBS; Ultra low energy

Indexed keywords

AMORPHIZATION; INTERFACES (MATERIALS); ION IMPLANTATION; NUCLEATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA;

ULTRA LOW ENERGY ION IMPLANTATION;

AMORPHOUS SILICON;

EID: 0033513693     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00696-X     Document Type: Article

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