Kinetics of ion-beam-induced interfacial amorphization in silicon

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5360-5373

  Henkel, T ^a   Heera, V ^a   Kogler R ^a   Skorupa, W ^a   Seibt, M ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000298553     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366458     Document Type: Article

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