MD-simulation of ion induced crystallization and amorphization processes in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 239-243

  Weber, B ^a   Gartner K ^a   Stock, D M ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); ION BOMBARDMENT; MELTING; MOLECULAR DYNAMICS; QUENCHING;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC); ION BEAM INDUCED INTERFACIAL AMORPHIZATION (IBIIA); STILLINGER-WEBER POTENTIAL;

SEMICONDUCTING SILICON;

EID: 0031547873     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00891-9     Document Type: Article

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