The role of point defects generated in the crystalline region in ion beam induced epitaxial crystallization of silicon

Radiation Effects and Defects in Solids

Volumn 139, Issue 3, 1996, Pages 189-195

  Titov, A I ^a   Belyakov, V S ^a   Cardwell, P ^b   Farrell, G ^b  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

Amorphous layers; Ion bombardment; Ion induced crystallization; Silicon

Indexed keywords

EID: 3743141390     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159608211546     Document Type: Article

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