Electron beam induced regrowth of ion implantation damage in Si and Ge

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 345-349

  Jencic I ^a   Robertson, I M ^b   Skvarc J ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Germanium; Recrystallization; Silicon; Sub threshold electrons

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; XENON;

ELECTRON BEAM INDUCED REGROWTH;

SEMICONDUCTOR GROWTH;

EID: 0033513938     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00781-2     Document Type: Article

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